Property studies of optical waveguide formed by 6.0 MeV carbon ion implantation into Nd:silicate glass

被引:4
作者
Li, SL [1 ]
Wang, KM
Chen, F
Wang, XL
Fu, G
Lu, QM
Hu, LL
Shen, DY
Ma, HA
机构
[1] Shandong Univ, Sch Phys & Microelect, Shandong 250100, Peoples R China
[2] Qufu Normal Univ, Dept Phys, Shandong 273165, Peoples R China
[3] Shandong Univ, Sch Chem & Chem Engn, Shandong 250100, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[5] Peking Univ, Minist Educ, Key Lab Heavy Ions Phys, Beijing 100871, Peoples R China
关键词
D O I
10.1088/0022-3727/38/16/023
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.
引用
收藏
页码:2899 / 2903
页数:5
相关论文
共 15 条
[1]   Monomode, nonleaky planar waveguides in a Nd3+-doped silicate glass produced by silicon ion implantation at low doses [J].
Chen, F ;
Wang, KM ;
Wang, XL ;
Li, XS ;
Lu, QM ;
Shen, DY ;
Nie, R .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) :2959-2961
[2]   MODELING OF REFRACTIVE-INDEX PROFILES OF HE+ ION-IMPLANTED KNBO3 WAVE-GUIDES BASED ON THE IRRADIATION PARAMETERS [J].
FLUCK, D ;
JUNDT, DH ;
GUNTER, P ;
FLEUSTER, M ;
BUCHAL, C .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) :6023-6031
[3]   Potassium ion-exchanged Er-Yb doped phosphate glass amplifier [J].
Fournier, P ;
Meshkinfam, P ;
Fardad, MA ;
Andrews, MP ;
Najafi, SI .
ELECTRONICS LETTERS, 1997, 33 (04) :293-295
[4]   Refractive indices and thicknesses of optical waveguides fabricated by silicon ion implantation into silica glass [J].
Gazecki, J ;
Kubica, JM ;
Zamora, M ;
Reeves, GK ;
Johnson, CM ;
Ridgway, MC .
THIN SOLID FILMS, 1999, 340 (1-2) :233-236
[5]   Characterization of Cu-Na ion-exchanged glass waveguides [J].
Gonella, F .
APPLIED PHYSICS LETTERS, 1996, 69 (03) :314-315
[6]   Fabrication and operation of Er-Yb glass waveguide laser arrays at 1.5μm [J].
Jose, G ;
Sorbello, G ;
Taccheo, S ;
Osellame, R ;
Ramponi, R ;
Foglietti, V ;
Cianci, E ;
Laporta, P .
LASER PROCESSING OF ADVANCED MATERIALS AND LASER MICROTECHNOLOGIES, 2003, 5121 :184-190
[7]  
KURMER JP, 1983, APPL PHYS LETT, V42, P146, DOI 10.1063/1.93854
[8]   Single-mode tapered waveguide laser in Er-doped glass with multimode-diode pumping [J].
Madasamy, P ;
Honkanen, S ;
Geraghty, DF ;
Peyghambarian, N .
APPLIED PHYSICS LETTERS, 2003, 82 (09) :1332-1334
[9]   Development of channel waveguide lasers in Nd3+-doped chalcogenide (Ga:La:S) glass through photoinduced material modification [J].
Mairaj, AK ;
Riziotis, C ;
Chardon, AM ;
Smith, PGR ;
Shepherd, DP ;
Hewak, DW .
APPLIED PHYSICS LETTERS, 2002, 81 (20) :3708-3710
[10]  
MAZZOLDI P, 1987, ION BEAM MODIFICATIO, pCH5