Landau level spectroscopy of valence bands in HgTe quantum wells: effects of symmetry lowering

被引:14
作者
Bovkun, L. S. [1 ,2 ]
Ikonnikov, A., V [1 ,3 ]
Aleshkin, V. Ya [1 ,4 ]
Spirin, K. E. [1 ]
Gavrilenko, V., I [1 ,4 ]
Mikhailov, N. N. [5 ,6 ]
Dvoretskii, S. A. [5 ,7 ]
Teppe, F. [8 ]
Piot, B. A. [2 ]
Potemski, M. [2 ]
Orlita, M. [2 ,9 ]
机构
[1] Inst Phys Microstruct RAS, Nizhnii Novgorod 603950, Russia
[2] CNRS UGA UPS INSA EMFL, LNCMI, F-38042 Grenoble, France
[3] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia
[4] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[5] Siberian Branch RAS, Inst Semicond Phys, Novosibirsk 630090, Russia
[6] Novosibirsk State Univ, Novosibirsk 630090, Russia
[7] Tomsk State Univ, Tomsk 634050, Russia
[8] Univ Montpellier II, CNRS, L2C, GIS TERALAB,UMR 5221, F-34095 Montpellier, France
[9] Charles Univ Prague, Inst Phys, CR-12116 Prague, Czech Republic
基金
俄罗斯基础研究基金会;
关键词
electronic structure; Landau levels; semiconductors; quantum wells; topological insulators; band structure methods; k . p method; ZINCBLENDE SEMICONDUCTORS; CYCLOTRON-RESONANCE; GERMANIUM;
D O I
10.1088/1361-648X/aafdf0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The Landau level spectroscopy technique has been used to explore the electronic structure of the valence band in a series of p-type HgTe/HgCdTe quantum wells with both normal and inverted ordering of bands. We find that the standard axial-symmetric 4-band Kane model, which is nowadays widely applied in physics of HgTe-based topological materials, does not fully account for the complex magneto-optical response observed in our experiments-notably, for the unexpected avoided crossings of excitations and for the appearance of transitions that are electric-dipole forbidden within this model. Nevertheless, reasonable agreement with experiments is achieved when the standard model is expanded to include effects of bulk and interface inversion asynunetries. These remove the axial synunetry, and among other, profoundly modify the shape of valence bands.
引用
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页数:13
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