Exponential input-to-state stability for complex-valued memristor-based BAM neural networks with multiple time-varying delays

被引:38
作者
Guo, Runan [1 ]
Zhang, Ziye [1 ,2 ]
Liu, Xiaoping [2 ,3 ]
Lin, Chong [4 ]
Wang, Haixia [5 ]
Chen, Jian [6 ]
机构
[1] Shandong Univ Sci & Technol, Coll Math & Syst Sci, Qingdao 266590, Peoples R China
[2] Lakehead Univ, Dept Elect Engn, Thunder Bay, ON P7B 5E1, Canada
[3] Shandong Jianzhu Univ, Sch Informat & Elect Engn, Jinan 250101, Shandong, Peoples R China
[4] Qingdao Univ, Inst Complex Sci, Qingdao 266071, Peoples R China
[5] Shandong Univ Sci & Technol, Key Lab Robot & Intelligent Technol Shandong Prov, Qingdao 266590, Peoples R China
[6] Qingdao Univ Technol, Coll Automat Engn, Qingdao 266555, Peoples R China
基金
中国博士后科学基金; 加拿大自然科学与工程研究理事会; 中国国家自然科学基金;
关键词
Exponential input-to-state stability; Memristor-based BAM neural networks; Complex-valued systems; Multiple time-varying delays; Lyapunov functional; STABILIZATION; DISSIPATIVITY; CRITERIA; SYSTEMS; ISS;
D O I
10.1016/j.neucom.2017.10.038
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
In this paper, the exponential input-to-state stability (ISS) for complex-valued memristor-based bidirectional associative memory (BAM) neural networks with multiple time-varying delays is discussed. By constructing a novel Lyapunov functional and utilizing inequality techniques, a sufficient criterion of the exponential input-to-state stability for the considered system is firstly derived. Moreover, similar result is also obtained for delayed complex-valued BAM neural networks without memristors. Finally, two numerical examples are given to demonstrate the effectiveness of the obtained results. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:2041 / 2054
页数:14
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