EUV optics: status, outlook and future

For more than 50 years, Moore's Law has driven the steady shrink of feature sizes for integrated circuits. This development has been enabled by continuous resolution improvements of each generation of lithography scanners. Nowadays the most recent scanner generation is using EUV wavelength together with 0.33NA optics to image the patterning information of the mask onto the silicon wafer. They are used in high volume manufacturing to produce leading edge semiconductor devices. To further increase the resolution of EUV scanners ZEISS is working on next generation EUV optics with an increased NA of 0.55. This next generation optics consists of a highly flexible illumination system and projection optics with NA 0.55 enabling single-exposure sub 8nm half-pitch resolution to allow scaling beyond the next decade. In this presentation we will report on the status of the 0.33NA EUV optics being shipped in volume to the customer. Then we will give a short recap of the system design of the 0.55NA optical column and we will show the status of the high-NA program at ZEISS. We report on the high-NA infrastructure including mirror polishing, coating, surface figure metrology, mirror handling, and integration tooling. Progress in manufacturing of mechanics, frames, and mirrors for both illuminator and POB will be shown. In the last section we will sketch options for further extensions of the EUV optics roadmap