Temperature effect on tungsten etching using a Cl2/O2 helicon discharge

被引：0

作者：

Kim, HW ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 43卷 / 04期

关键词：

tungsten; metal gate; etching; temperature;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of temperature on tungsten (W) etching has been investigated using the Cl-2/O-2 plasmas in a helicon etcher. The etch rates of W and the wafer temperature were increased by increasing the source power and the bias power and by decreasing the pressure, indicating that the W etching is controlled by the temperature. The use of Cl-2/O-2 plasmas to successfully pattern W-metal gate electrodes has been demonstrated.

引用

页码：526 / 528

页数：3

共 11 条

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