Making clean electrical contacts on 2D transition metal dichalcogenides

被引:177
作者
Wang, Yan [1 ]
Chhowalla, Manish [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge, England
基金
英国工程与自然科学研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; AREA MONOLAYER MOS2; SCHOTTKY-BARRIER; MOLYBDENUM-DISULFIDE; OHMIC CONTACT; TEMPERATURE; RESISTANCE; TRANSPORT; STRAIN; MOTE2;
D O I
10.1038/s42254-021-00389-0
中图分类号
O59 [应用物理学];
学科分类号
摘要
A key challenge in fabricating devices out of 2D materials is in making good electrical contact. This Expert Recommendation discusses the physics of electrical contacts and provides tips on improving contact quality. 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in fabricating devices out of 2D semiconductors is the need for ultra-clean contacts with resistances approaching the quantum limit. The lack of high-quality, low-contact-resistance P-type and N-type contacts on 2D TMDs has limited progress towards the next generation of low-power devices, such as the tunnel field-effect transistors. In this Expert Recommendation, we summarize strategies and provide guidance for making clean van der Waals contacts on monolayered TMD semiconductors. We also discuss the physics of contacts in 2D semiconductors and prospects for achieving quantum conductance.
引用
收藏
页码:101 / 112
页数:12
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