Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers

被引:54
作者
Kim, Dong Chan [1 ]
Jung, Byung Oh [1 ]
Lee, Ju Ho [2 ]
Cho, Hyung Koun [1 ]
Lee, Jeong Yong [2 ]
Lee, Jun Hee [3 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Dong A Univ, Dept Adv Mat Engn, Pusan 604714, South Korea
基金
新加坡国家研究基金会;
关键词
OPTICAL-PROPERTIES; PHOTODETECTORS; EFFICIENT; SENSORS; FILMS;
D O I
10.1088/0957-4484/22/26/265506
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study reports that the visible-blind ultraviolet (UV) photodetecting properties of ZnO nanowire based photodetectors were remarkably improved by introducing ultrathin insulating MgO layers between the ZnO nanowires and Si substrates. All layers were grown without pause by metal organic chemical vapor deposition and the density and vertical arrangement of the ZnO nanowires were strongly dependent on the thickness of the MgO layers. The sample in which an MgO layer with a thickness of 8 nm was inserted had high density nanowires with a vertical alignment and showed dramatically improved UV photosensing performance (photo-to-dark current ratio = 1344.5 and recovery time = 350 ms). The photoresponse spectrum revealed good visible-blind UV detectivity with a sharp cut off at 378 nm and a high UV/visible rejection ratio. A detailed discussion regarding the developed UV photosensing mechanism from the introduction of the i-MgO layers and highly dense nanowires in the n-ZnO nanowires/i-MgO/n-Si substrates structure is presented in this work.
引用
收藏
页数:8
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