Ion irradiation control of ferromagnetism in (Ga,Mn)As

被引：6

作者：

Kato, H

Hamaya, K

Taniyama, T

Kitamoto, Y

Munekata, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 24-27期

关键词：

III-V magnetic semiconductor; (Ga; Mn)As; ion irradiation; FIB; hole-mediated ferromagnetism;

D O I：

10.1143/JJAP.44.L816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga+ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga+ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange interaction between Mn spins. This change in hole concentration is also verified using micro-Raman spectroscopy. We envisage that this approach offers a means of modifying the ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter scale.

引用

页码：L816 / L818

页数：3

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