Ion irradiation control of ferromagnetism in (Ga,Mn)As

被引：6
|
作者：
Kato, H
Hamaya, K
Taniyama, T
Kitamoto, Y
Munekata, H
机构：
[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 24-27期
关键词：
III-V magnetic semiconductor; (Ga; Mn)As; ion irradiation; FIB; hole-mediated ferromagnetism;
D O I：
10.1143/JJAP.44.L816
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga+ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga+ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange interaction between Mn spins. This change in hole concentration is also verified using micro-Raman spectroscopy. We envisage that this approach offers a means of modifying the ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter scale.
引用
收藏
页码：L816 / L818
页数：3
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