Temperature dependence of forward and reverse characteristics of Ti, W, Ta and Ni Schottky diodes on 4H-SiC

被引：52
|
作者：
Treu, M
Rupp, R
Kapels, H
Bartsch, W
机构：
[1] Infineon Technol AG, AI IP DD SIC, DE-91050 Erlangen, Germany
[2] SICED GmbH, DE-91050 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
field emission; Schottky diodes; temperature dependent C-V characteristics;
D O I：
10.4028/www.scientific.net/MSF.353-356.679
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study Ta, W, Ti, and Ni Schottky diodes are characterized under forward and reverse bias for temperatures between +21 degreesC and +200 degreesC. Additionally the Ti Diodes were characterized for temperatures between -168 degreesC and +21 degreesC. It will be shown that the reverse current is dominated by thermionic field emission for all metals, if the junction temperature is in the typical device operating temperature Furthermore we will show that nan-ideal forward characteristics not necessarily have a negative in on the reverse characteristics of the diodes. This will be explained by a model proposed by Tung, which considers the pinch off of the defects by the defect free areas around the defect.
引用
收藏
页码：679 / 682
页数：4
相关论文
共 50 条
  • [21] Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
    A. A. Lebedev
    V. V. Kozlovski
    M. E. Levinshtein
    D. A. Malevsky
    G. A. Oganesyan
    A. M. Strel’chuk
    K. S. Davydovskaya
    Semiconductors, 2022, 56 : 189 - 194
  • [22] Effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC Schottky barrier diodes
    Alok, D
    Egloff, R
    Arnold, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 929 - 932
  • [23] Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
    Lebedev, A. A.
    Kozlovski, V. V.
    Levinshtein, M. E.
    Malevsky, D. A.
    Oganesyan, G. A.
    Strel'chuk, A. M.
    Davydovskaya, K. S.
    SEMICONDUCTORS, 2022, 56 (03) : 189 - 194
  • [24] Formation and properties of Schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation
    Wang, Y.
    Mikhov, M. K.
    Skromme, B. J.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 915 - 918
  • [25] 4H-SiC Schottky diodes with Ni2Si contacts for X-ray detection
    Lioliou, G.
    Gemmell, N. R.
    Mazzillo, M.
    Sciuto, A.
    Barnett, A. M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 940 : 328 - 336
  • [26] NO gas detection at high temperature using thin-Pt 4H-SiC and 6H-SiC schottky diodes
    Khan, SA
    de Vasconcelos, EA
    Uchida, H
    Katsube, T
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 961 - 964
  • [27] Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range
    A. A. Lebedev
    V. V. Kozlovski
    M. E. Levinshtein
    D. A. Malevsky
    R. A. Kuzmin
    Semiconductors, 2023, 57 : 239 - 243
  • [28] Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range
    Lebedev, A. A.
    Kozlovski, V. V.
    Levinshtein, M. E.
    Malevsky, D. A.
    Kuzmin, R. A.
    SEMICONDUCTORS, 2023, 57 (05) : 239 - 243
  • [29] Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes
    Morrison, DJ
    Hilton, KP
    Uren, MJ
    Wright, NG
    Johnson, CM
    O'Neill, AG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 345 - 348
  • [30] Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes
    Horsfall, AB
    Vassilevski, KV
    Johnson, CM
    Wright, NG
    O'Neill, AG
    Gwilliam, RM
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1149 - 1152
12345