Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

被引：4

作者：

Baude, PF

Haase, MA

Haugen, GM

Law, KK

Miller, TJ

Smekalin, K

Phillips, J

Bhattacharya, P

机构：

[1] 3M CO,3M CTR 201 1N 35,ST PAUL,MN 55144

[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 25期

关键词：

D O I：

10.1063/1.116647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conduction-band offsets in wide-band-gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 Angstrom thick Cd0.3Zn0.7S0.06Se0.94 single quantum wells with ZnS0.06Se0.94 barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the quaternary wells of 179+/-10 meV was measured. This corresponds to a conduction-band offset energy of similar to 251+/-20 meV. (C) 1996 American Institute of Physics.

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页码：3591 / 3593

页数：3

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