A new silicon-based ferroelectric sandwich structure

被引：11

作者：

Ren, TL ^{[1
]}

Zhang, LT ^{[1
]}

Liu, LT ^{[1
]}

Li, ZJ ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2001年 / 18卷 / 01期

关键词：

D O I：

10.1088/0256-307X/18/1/346

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O-3/PbTiO3 sandwich structure is fabricated by a sol-gel method. Compared with other fabrication processes without PbTiO3 buffer layers, the annealing temperature is greatly reduced by as much as 100 degrees C. Capacitance-voltage, polarization-electric field and dielectric-fiequency properties of this sandwich structure are studied. The Pb(ZrxTi1-x)O-3 films are proved to have good dielectric and ferroelectric properties.

引用

页码：132 / 133

页数：2

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