Molecular dynamics simulation of film growth by energetic aluminum cluster impact

被引：0

作者：

Kang, JW ^{[1
]}

Choi, KS ^{[1
]}

Kang, JC ^{[1
]}

Byun, KR ^{[1
]}

Hwang, HJ ^{[1
]}

机构：

[1] Chung Ang Univ, Dept Elect Engn, Seoul 156756, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2001年 / 38卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Energetic aluminum cluster deposition has been investigated with a classical molecular dynamics simulation and the Metropolis Monte Carlo simulation utilizing the second-moment approximation of the tight-binding scheme, when a local area became a melting state on the surface around the impact point of an energetic aluminum cluster during a few ps, intermixing easily occurred and a good epitaxial film with bulk density was formed. For excellent film growth using cluster impact, it is necessary to make the local area temperature higher than the melting temperature on the surface around the impact point of an energetic cluster.

引用

页码：158 / 161

页数：4

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