Rectifying Effect in a High-Performance Ballistic Diode Bridge Based on Encapsulated Graphene with a Unique Design

被引：3

作者：

Dinh Cong Nguyen ^{[1
]}

Kim, Minwook ^{[1
]}

Van Huy Nguyen ^{[1
]}

Lee, Yeonjae ^{[1
]}

Kang, Dongwoon ^{[1
]}

Kumar, Sunil ^{[1
,2
]}

Thi Phuong Anh Bach ^{[1
]}

Hussain, Muhammad ^{[1
]}

Jung, Jongwan ^{[1
]}

Seo, Yongho ^{[1
,2
]}

机构：

[1] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea

[2] Sejong Univ, HMC, Seoul 05006, South Korea

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2022年 / 4卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

hBN encapsulated graphene; ballistic graphene cross junction; bridge ballistic graphene device; ballistic rectification; ballistic diode; high responsivity; TRANSPORT;

D O I：

10.1021/acsaelm.1c01035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device's asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device's estimated responsivities at 38 000 V/W for holes and 23 000 V/W for electrons at room temperature are among the highest values for a ballistic device reported to date.

引用

页码：1518 / 1524

页数：7

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