Applications of heavy ion microprobe for single event effects analysis

被引：8
作者：
Reed, Robert A. [1 ]
Vizkelethy, Gyorgy
Pellish, Jonathan A.
Sierawski, Brian
Warren, Kevin M.
Porter, Mark
Wilkinson, Jeff
Marshall, Paul W.
Niu, Guofu
Cressler, John D.
Schrimpf, Ronald D.
Tipton, Alan
Weller, Robert A.
机构：
[1] Vanderbilt Univ, Stevenson Ctr 5635, Nashville, TN 37235 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA
[4] Medtron Microelect Ctr, Tempe, AZ 85281 USA
[5] Medtronic, CRDM Device Technol, Minneapolis, MN 55432 USA
[6] NASA Consultant, Brookneal, VA 24528 USA
[7] Auburn Univ, Auburn, AL 36894 USA
[8] Georgia Inst Technol, Atlanta, GA 30332 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 261卷 / 1-2期
基金：
美国能源部;
关键词：
radiation effects in semiconductors; focused ion beam;
D O I：
10.1016/j.nimb.2007.04.163
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The motion of ionizing-radiation-induced rogue charge carriers in a semiconductor can create unwanted voltage and current conditions within a microelectronic circuit. If sufficient unwanted charge or current occurs on a sensitive node, a variety of single event effects (SEEs) can occur with consequences ranging from trivial to catastrophic. This paper describes the application of heavy ion microprobes to assist with calibration and validation of SEE modeling approaches. (c) 2007 Elsevier B. V. All rights reserved.
引用
收藏
页码：443 / 446
页数：4
相关论文
共 9 条
  • [1] Charge collection and charge sharing in a 130 nm CMOS technology
    Amusan, Oluwole A.
    Witulski, Arthur F.
    Massengill, Lloyd W.
    Bhuva, Bharat L.
    Fleming, Patrick R.
    Alles, Michael L.
    Sternberg, Andrew L.
    Black, Jeffrey D.
    Schrimpf, Ronald D.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3253 - 3258
  • [2] Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
    Marshall, P
    Carts, M
    Currie, S
    Reed, R
    Randall, B
    Fritz, K
    Kennedy, K
    Berg, M
    Krithivasan, R
    Siedleck, C
    Ladbury, R
    Marshall, C
    Cressler, J
    Niu, GF
    LaBel, K
    Gilbert, B
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) : 2446 - 2454
  • [3] A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures
    Niu, GF
    Krithivasan, R
    Cressler, JD
    Riggs, PA
    Randall, BA
    Marshall, PW
    Reed, RA
    Gilbert, B
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) : 3107 - 3114
  • [4] Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-μm SiGe heterojunction bipolar transistors and circuits
    Reed, RA
    Marshall, PW
    Pickel, JC
    Carts, MA
    Fodness, B
    Niu, GF
    Fritz, K
    Vizkelethy, G
    Dodd, PE
    Irwin, T
    Cressler, JD
    Krithivasan, R
    Riggs, P
    Prairie, J
    Randall, B
    Gilbert, B
    LaBel, KA
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) : 2184 - 2190
  • [5] SCHRIMPF RD, 2004, RADIATIN EFFECTS SOF
  • [6] Microbeam studies of single-event effects
    Sexton, FW
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 687 - 695
  • [7] *SYN INC, DESSIS DEV SIM
  • [8] Multiple-bit upset in 130 nm CMOS technology
    Tipton, Alan D.
    Pellish, Jonathan A.
    Reed, Robert A.
    Schrimpf, Ronald D.
    Weller, Robert A.
    Mendenhall, Marcus H.
    Sierawski, Brian
    Sutton, Akil K.
    Diestelhorst, Ryan M.
    Espinel, Gustavo
    Cressler, John D.
    Marshall, Paul W.
    Vizkelethy, Gyorgy
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3259 - 3264
  • [9] Three-dimensional simulation of heavy-ion induced charge collection in SiGe HBTs on SOI
    Varadharajaperumal, M
    Niu, GF
    Cressler, JD
    Reed, RA
    Marshall, PW
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3298 - 3303
1