High structural quality InGaN/GaN multiple quantum well solar cells

被引：7

作者：

Dogmus, Ezgi ^{[1
]}

Zegaoui, Malek ^{[1
]}

Largeau, Ludovic ^{[2
]}

Tchernycheva, Maria ^{[3
]}

Neplokh, Vladimir ^{[3
]}

Weiszer, Saskia ^{[4
,5
]}

Schuster, Fabian ^{[4
,5
]}

Stutzmann, Martin ^{[4
,5
]}

Foldyna, Martin ^{[6
]}

Medjdoub, Farid ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, IEMN, Av Poincare, F-59650 Villeneuve Dascq, France

[2] LPN CNRS, F-91460 Marcoussis, France

[3] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France

[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[5] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

[6] Ecole Polytech, LPICM CNRS, F-91128 Palaiseau, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 12 | 2015年 / 12卷 / 12期

关键词：

InGaN; multiple quantum wells; solar cells; characterization; INN;

D O I：

10.1002/pssc.201510137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of InGaN/GaN MQW solar cells with 24% indium content which shows extended spectral response up to 530 nm. In particular, defect density of the active region of In0.15Ga0.85N/GaN MQW solar cell has been assessed in top view electron beam induced current (EBIC) analysis. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1412 / 1415

页数：4

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