A comprehensive bipolar avalanche multiplication compact model for circuit simulation

被引：15

作者：

Kloosterman, WJ ^{[1
]}

Paasschens, JCJ ^{[1
]}

Havens, RJ ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年

关键词：

D O I：

10.1109/BIPOL.2000.886197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a new comprehensive avalanche multiplication model is presented that takes into account the finite thickness of the epilayer, modulation of the electric field by the collector current (Kirk effect), current spreading in the epilayer and quasi-saturation. Two parameters are needed to model the collector voltage dependency at small current levels and one parameter to describe high current effects. The dependency of the collector-emitter breakdown voltage BVceo with collector current is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately.

引用

页码：172 / 175

页数：4

共 6 条

[1] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[2] MODELING OF THE COLLECTOR EPILAYER OF A BIPOLAR-TRANSISTOR IN THE MEXTRAM MODEL [J].

DEGRAAFF, HC ;

KLOOSTERMAN, WJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (02) :274-282

[3] AVALANCHE MULTIPLICATION IN A COMPACT BIPOLAR-TRANSISTOR MODEL FOR CIRCUIT SIMULATION [J].

KLOOSTERMAN, WJ ;

DEGRAAFF, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (07) :1376-1380

[4] QUBiC3:: A 0.5μm BiCMOS production technology, with fT=30GHz, fmax=60GHz and high-quality passive components for wireless telecommunication applications [J].

Pruijmboom, A ;

Szmyd, D ;

Brock, R ;

Wall, R ;

Morris, N ;

Fong, K ;

Jovenin, F .

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998, :120-123

[5] ON BISTABLE BEHAVIOR AND OPEN-BASE BREAKDOWN OF BIPOLAR-TRANSISTORS IN THE AVALANCHE REGIME - MODELING AND APPLICATIONS [J].

REISCH, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1398-1409

[6]

Slotboom J. W., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P127, DOI 10.1109/IEDM.1991.235484

← 1 →