An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device

被引：19

作者：

Han, Pengde ^{[1
]}

Sun, Bai ^{[2
]}

Cheng, Sen ^{[1
]}

Yu, Fangli ^{[1
]}

Jiao, Baoxiang ^{[1
]}

Wu, Qisheng ^{[1
]}

机构：

[1] Yancheng Inst Technol, Sch Mat Engn, Yancheng 224051, Peoples R China

[2] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 681卷

基金：

中国国家自然科学基金;

关键词：

Resistive switching; Memory device; Optoelectronic; Memristor; RRAM; TEMPERATURE; OXIDE; ILLUMINATION; NANOWIRES; ARRAYS;

D O I：

10.1016/j.jallcom.2016.04.268

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is known to all of us that the resistive switching memory behavior of metal-oxide-metal structure device is a fascinating candidate for next generation nonvolatile memories. In this work, alpha-SnWO4 nanoparticles were synthesized by a hydrothermal process. Further, a resistive switching memory device with Ag/alpha-SnWO4/FTO structure is demonstrated. The device presents an optoelectronic bipolar resistive switching memory behavior at room temperature. This study is useful for exploring multifunctional materials and their applications in optoelectronic nonvolatile memory devices. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：516 / 521

页数：6

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