Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

被引：24

作者：

Capan, Ivana ^{[1
]}

Brodar, Tomislav ^{[1
]}

Yamazaki, Yuichi ^{[2
]}

Oki, Yuya ^{[2
]}

Ohshima, Takeshi ^{[2
]}

Chiba, Yoji ^{[3
]}

Hijikata, Yasuto ^{[3
]}

Snoj, Luka ^{[4
]}

Radulovic, Vladimir ^{[4
]}

机构：

[1] Ruder Bakovic Inst, Bijenicka 54, Zagreb 10000, Croatia

[2] Natl Inst Quantum & Radiol Sci & Technol, Takasaki Adv Radiat Res Inst, 1233 Watanuki, Takasaki, Gunma 3701292, Japan

[3] Saitama Univ, Grad Sch Sci & Engn, Saitama 3380825, Japan

[4] Jozef Stefan Inst, Jamova 31, Ljubljana 1000, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2020年 / 478卷

基金：

欧盟地平线“2020”;

关键词：

Silicon carbide; Defects; Boron; Minority carriers; Neutron radiation; ELECTRICALLY ACTIVE DEFECTS; ELECTRON-IRRADIATION; DEEP; SPECTROSCOPY; LIFETIME; 4H;

D O I：

10.1016/j.nimb.2020.07.005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report on influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC. Together with the increase of the well-known carbon vacancy (V-C) majority carrier related trap, neutron irradiation has introduced two deep traps, labeled as EH1 and EH3 with the activation energies for electron emission estimated as 0.4 and 0.7 eV bellow the conduction band, respectively. Based on Laplace deep level transient spectroscopy (DLTS) results, we have assigned EH1 trap to silicon vacancy (V-Si). Two minority carrier traps labelled as B and D-center were detected by minority transient spectroscopy (MCTS) and assigned to substitutional boron B-Si and B-C, respectively. Activation energies for hole emission for B and D-center are estimated as 0.27 and 0.60 eV above the valence band, respectively. We have identified two emission lines for D-center by Laplace-MCTS measurements and assigned them to B-C sitting at hexagonal (-h) and cubic (-k) lattice sites.

引用

页码：224 / 228

页数：5

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