Spontaneous lateral alignment of multistacked In0.45Ga0.55As quantum dots on GaAs(3 1 1)B substrate

被引：10

作者：

Lee, JS ^{[1
]}

Sugisaki, M ^{[1
]}

Ren, HW ^{[1
]}

Sugou, S ^{[1
]}

Masumoto, Y ^{[1
]}

机构：

[1] ERATO, JST, Tsukuba Res Consortium, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 200卷 / 1-2期

关键词：

quantum dots; self-alignment; GaAs(3 1 1)B; InGaAs; metalorganic; vapor-phase epitaxy;

D O I：

10.1016/S0022-0248(98)01286-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In0.45Ga0.55As/GaAs multistacking quantum dot (QD) structures were fabricated on a GaAs(3 1 1)B substrate by metalorganic vapor-phase epitaxy. QDs spontaneously aligned in the [0 1 1] direction were observed on stacked QDs, whereas QDs were randomly distributed at the first In0.45Ga0.55As layer growth. The formation mechanism for self-alignment was studied based on the number of In0.45Ga0.55As/GaAs multilayers, GaAs spacing layer thickness, and the nominal thickness of In0.45Ga0.55As dot structures. Photoluminescence spectra showing clear polarization dependence indicate carrier coupling in QD arrays. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：77 / 84

页数：8

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