Unique nondestructive inline metrology of TSVs by X-ray with model based library method.

被引：0

作者：

Umehara, Yasutoshi ^{[1
]}

Jin, Wen ^{[2
]}

机构：

[1] Tokyo Electron Inc, Fuchu, Tokyo 1838705, Japan

[2] Tokyo Electron Amer Inc, Fremont, CA 94538 USA

来源：

2014 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unique nondestructive inline profile metrology of through-Silicon via (TSV) for 3D integrated circuits in production processes such as ultra-deep etching and Cu pillar forming process was introduced. We tried to measure the depth profile of TSVs from X-ray images with a tilted angle by applying model based library method. The fairly good repeatability in critical dimensions (CDs) and the depths (<100nm, <200nm respectively) and good correlation in CDs with results from SEM measurement were obtained, and good robustness under low SNR similar to 2 of the images was confirmed.

引用

页码：233 / 235

页数：3

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