A New Model for Through-Silicon Vias on 3-D IC Using Conformal Mapping Method

被引:39
作者
Cheng, Tai-Yu [1 ,2 ]
Wang, Chuen-De [1 ,2 ]
Chiou, Yih-Peng [1 ,3 ]
Wu, Tzong-Lin [1 ,2 ]
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
关键词
Conformal mapping; equivalent circuit model; 3-D integrated circuits; through-silicon via (TSV);
D O I
10.1109/LMWC.2012.2195776
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Based on the conformal mapping technique, a novel macro-pi model is proposed to accurately predict the electrical performance of a low pitch-to-diameter ratio (P/D) through-silicon via (TSV) pair on the 3-D IC. The model combines the conventional resistance and inductance (RL) circuit with several parallel capacitances and conductance (CG) circuit. The accuracy-improved CG model rigorously considers the proximity effect. The model can be established by using the derived closed-form formula that is related to geometrical parameters of the TSVs. Compared with the conventional pi-type model, the proposed model can significantly reduce the error of CG value from 25% to 2% with respect to a full-wave simulation, and thus the insertion loss can be well predicted from dc to 40 GHz.
引用
收藏
页码:303 / 305
页数:3
相关论文
共 7 条
[1]   An analytical fringe capacitance model for interconnects using conformal mapping [J].
Bansal, Aditya ;
Paul, Bipul C. ;
Roy, Kaushik .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2006, 25 (12) :2765-2774
[2]  
Churchill R. W., 1984, COMPLEX VARIABLE APP, P329
[3]   Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via [J].
Liu, En-Xiao ;
Li, Er-Ping ;
Ewe, Wei-Bin ;
Lee, Hui Min ;
Lim, Teck Guan ;
Gao, Shan .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (06) :1454-1460
[4]   Slow Wave and Dielectric Quasi-TEM Modes of Metal-Insulator-Semiconductor (MIS) Structure Through Silicon Via (TSV) in Signal Propagation and Power Delivery in 3D Chip Package [J].
Pak, Jun So ;
Cho, Jonghyun ;
Kim, Joohee ;
Lee, Junho ;
Lee, Hyungdong ;
Park, Kunwoo ;
Kim, Joungho .
2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2010, :667-672
[5]   CHARACTERIZATION OF VIA CONNECTIONS IN SILICON CIRCUIT BOARDS [J].
QUINE, JP ;
WEBSTER, HF ;
GLASCOCK, HH ;
CARLSON, RO .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (01) :21-27
[6]  
Ryu C, 2006, ESTC 2006: 1ST ELECTRONICS SYSTEMINTEGRATION TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, P215
[7]   Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs [J].
Xu, Chuan ;
Li, Hong ;
Suaya, Roberto ;
Banerjee, Kaustav .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) :3405-3417