Tunable Bandgap in Silicene and Germanene

被引：1301

作者：

Ni, Zeyuan ^{[1
]}

Liu, Qihang ^{[1
]}

Tang, Kechao ^{[1
]}

Zheng, Jiaxin ^{[1
]}

Zhou, Jing ^{[1
]}

Qin, Rui ^{[1
]}

Gao, Zhengxiang ^{[1
]}

Yu, Dapeng ^{[1
]}

Lu, Jing ^{[1
]}

机构：

[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

来源：

NANO LETTERS | 2012年 / 12卷 / 01期

关键词：

Silicene; germanene; band gap; quantum transport; electric field; first-principles calculation; GRAPHENE; TRANSISTORS; GAP;

D O I：

10.1021/nl203065e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.

引用

页码：113 / 118

页数：6

共 39 条

[1]

[Anonymous], 2011, ATOMISTIX TOOLK VERS

[2] Effects of Metallic Contacts on Electron Transport through Graphene [J].

Barraza-Lopez, Salvador ;

Vanevic, Mihajlo ;

Kindermann, Markus ;

Chou, M. Y. .

PHYSICAL REVIEW LETTERS, 2010, 104 (07)

[3] Density-functional method for nonequilibrium electron transport -: art. no. 165401 [J].

Brandbyge, M ;

Mozos, JL ;

Ordejón, P ;

Taylor, J ;

Stokbro, K .

PHYSICAL REVIEW B, 2002, 65 (16) :1654011-16540117

[4] Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium [J].

Cahangirov, S. ;

Topsakal, M. ;

Akturk, E. ;

Sahin, H. ;

Ciraci, S. .

PHYSICAL REVIEW LETTERS, 2009, 102 (23)

[5] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].

Castro, Eduardo V. ;

Novoselov, K. S. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Dos Santos, J. M. B. Lopes ;

Nilsson, Johan ;

Guinea, F. ;

Geim, A. K. ;

Castro Neto, A. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (21)

[6]

Datta S., 1997, Electronic transport in mesoscopic systems, DOI DOI 10.1063/1.2807624

[7] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[8] AN ALL-ELECTRON NUMERICAL-METHOD FOR SOLVING THE LOCAL DENSITY FUNCTIONAL FOR POLYATOMIC-MOLECULES [J].

DELLEY, B .

JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (01) :508-517

[9] Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices [J].

Farmer, Damon B. ;

Golizadeh-Mojarad, Roksana ;

Perebeinos, Vasili ;

Lin, Yu-Ming ;

Tulevski, George S. ;

Tsang, James C. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (01) :388-392

[10] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

← 1 2 3 4 →