Mcirostructural and electrical properties of ferroelectric/ZnO heterostructures

被引:0
作者
Wei, X. H. [1 ]
Jie, W. J. [1 ]
Zhu, J. [1 ]
Li, Y. R. [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3 | 2008年
关键词
epitaxial growth; pulsed laser deposition; metalferroelectric-semiconductor;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The microstructural and electrical properties of ferroelectric/ZnO heterostructures fabricated on SrTiO3 substrates by pulsed laser deposition (PLD) were investigated. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) were employed to characterize the orientation of the samples. On ferroelectric oxide surfaces of (001) and (111) orientations, both of ZnO films followed c-axial direction. For the former, twin-domain structure would result in a smaller mismatch of about -1% by the epitaxial relation of ZnO[110]//BaTiO3 < 110 >. On (111) surfaces, single-domain ZnO films were observed with the in-plane orientation ZnO[100]//BaTiO3[110] although 30 degrees domain rotation in the in-plane direction of the ZnO epilayer respect to the perovskite surfaces induced very large mismatch of about -15%. The allepitaxial metal-ferroelectric-semiconductor (MFS) structures of ZnO/Pb(Zr0.52Ti0.48)O-3/SrRuO3 were deposited on SrTiO3(111) substrates due to the cube-on-cube epitaxial relationship between ferroelectric, SrRuO3 electrode and substrates. Capacitance-voltage (C-P) measurements showed a ferroelectric window, indicating that the structures can achieve memory performance. The improvement of MFS inversion characteristics could be mainly due to good ferroelectric/ZnO interface.
引用
收藏
页码:485 / 488
页数:4
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