Temperature instability of low-temperature deposited a-Si:H TFTs fabricated on plastic substrate

被引：0
|
作者：
Ho, K. Y. [1 ]
Cheng, C. H. [1 ]
Cheng, C. C. [1 ]
Chen, P. C. [1 ]
Yeh, Y. H. [1 ]
机构：
[1] Ind Technol Res Inst, Thin Film Transistor Technol Dept, Panel Integrat Div 1, Hsinchu 310, Taiwan
来源：
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2008年 / 16卷 / 06期
关键词：
flexible; a-Si TFTs; instability;
D O I：
10.1889/1.2938870
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-temperature deposited a-Si:H TFTs have been successfully fabricated on colorless polyimide (CPI) substrate for flexible-display applications. A serious degradation in threshold voltage was observed after applying external thermal stress. The threshold-voltage shift saturates after applying several thermal stress cycles. In addition, the TFTs show instability under long periods of thermal stress with fixed temperature. This phenomenon was composed of thermally induced traps and substrate-expansion-induced mechanical stress. Finally, the a-Si:H TFT backplane fabricated on a PI substrate at low temperature has been successfully demonstrated for flexible AMLCDs.(1,2).
引用
收藏
页码：683 / 689
页数：7
相关论文
共 50 条
  • [31] Low temperature a-Si:H TFT on plastic films:: Materials and fabrication aspects
    Sazonov, A
    Stryahilev, D
    Nathan, A
    2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 525 - 528
  • [32] Low-temperature instability of the plastic deformation of aluminum
    V. P. Lebedev
    V. S. Krylovskiĭ
    S. V. Lebedev
    S. V. Savich
    Physics of the Solid State, 2007, 49 : 2091 - 2098
  • [33] Printing formation of low-temperature poly-Si TFTs
    Furusawa, M.
    Tanaka, H.
    Kamakura, T.
    Shimoda, T.
    IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2006, : 1655 - +
  • [34] The influence of the substrate temperature on the recombination processes in a-Si:H
    Lubianiker, Y
    Balberg, I
    Fonseca, L
    Weisz, SZ
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 209 - 214
  • [35] Electrical Instability of the a-Si:H TFTs Fabricated by Maskless Laser-Write Lithography on a Spherical Surface
    Yoo, Geonwook
    Radtke, Daniela
    Baek, Gwanghyeon
    Zeitner, Uwe D.
    Kanicki, Jerzy
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 160 - 164
  • [36] Poly-Si TFTs fabricated on flexible substrates by using sputter deposited a-Si films
    Kim, YH
    Kim, NK
    Han, JI
    Moon, DG
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 48 : S14 - S17
  • [37] Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers
    Plagwitz, H
    Nerding, M
    Ott, N
    Strunk, HP
    Brendel, R
    PROGRESS IN PHOTOVOLTAICS, 2004, 12 (01): : 47 - 54
  • [38] Low dose radiation effects on a-Si:H TFTs
    Picos, R.
    Papadopoulos, N. P.
    Lee, Czang-Ho
    Lopez-Grifol, A.
    Roca, M.
    Isern, E.
    Wong, William S.
    Garcia-Moreno, E.
    PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2015, : 32 - +
  • [39] LOW-TEMPERATURE INSTABILITY OF PLASTIC-FLOW IN CRYSTALS
    BRONINA, EM
    NECHIPORENKO, IN
    FIZIKA NIZKIKH TEMPERATUR, 1985, 11 (10): : 1110 - 1112
  • [40] LOW-TEMPERATURE INSTABILITY OF PLASTIC-FLOW OF ALLOYS
    KOMNIK, SN
    DEMIRSKY, VV
    STARTSEV, VI
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1985, 35 (03) : 230 - 234
12345