Temperature instability of low-temperature deposited a-Si:H TFTs fabricated on plastic substrate

被引：0
|
作者：
Ho, K. Y. [1 ]
Cheng, C. H. [1 ]
Cheng, C. C. [1 ]
Chen, P. C. [1 ]
Yeh, Y. H. [1 ]
机构：
[1] Ind Technol Res Inst, Thin Film Transistor Technol Dept, Panel Integrat Div 1, Hsinchu 310, Taiwan
来源：
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2008年 / 16卷 / 06期
关键词：
flexible; a-Si TFTs; instability;
D O I：
10.1889/1.2938870
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-temperature deposited a-Si:H TFTs have been successfully fabricated on colorless polyimide (CPI) substrate for flexible-display applications. A serious degradation in threshold voltage was observed after applying external thermal stress. The threshold-voltage shift saturates after applying several thermal stress cycles. In addition, the TFTs show instability under long periods of thermal stress with fixed temperature. This phenomenon was composed of thermally induced traps and substrate-expansion-induced mechanical stress. Finally, the a-Si:H TFT backplane fabricated on a PI substrate at low temperature has been successfully demonstrated for flexible AMLCDs.(1,2).
引用
收藏
页码：683 / 689
页数：7
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