Electron Mobility and Drift Velocity in Selectively Doped InAlAs/InGaAs/InAlAs Heterostructures

被引:5
|
作者
Vasil'evskii, I. S. [1 ,2 ]
Galiev, G. B. [1 ,2 ]
Klimov, E. A. [1 ]
Pozela, K. [3 ]
Pozela, J. [3 ]
Juciene, V. [3 ]
Suziedelis, A. [3 ]
Zurauskiene, N. [3 ]
Kersulis, S. [3 ]
Stankevic, V. [3 ]
机构
[1] MEPHI Natl Nucl Res Univ, Moscow 115409, Russia
[2] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia
[3] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania
关键词
QUANTUM-WELLS; SCATTERING; TRANSPORT; BARRIER; PHONONS;
D O I
10.1134/S1063782611090259
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In0.8Ga0.2As/In0.7Al0.3As metamorphic structure with a high molar fraction of In (0.7-0.8) is as high as 12.3 x 10(3) cm(2) V-1 s(-1) at room temperature. An increase in the electron mobility by a factor of 1.1-1.4 is attained upon the introduction of thin (1-3 nm) InAs layers into a quantum well of selectively doped In0.53Ga0.47As/In0.52Al0.48As heterostructures. A maximal drift velocity attains 2.5 x 10(7) cm/s in electric fields of 2-5 kV/cm. The threshold field F-th for the intervalley Gamma-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5-3. The effect of two- to threefold decrease in the threshold field F-th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well. DOI: 10.1134/S1063782611090259
引用
收藏
页码:1169 / 1172
页数:4
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