A high efficiency full-wave rectifier in standard CMOS technology

被引：0

作者：

Bawa, Gaurav ^{[1
]}

Jow, Uei-Ming ^{[1
]}

Ghovanloo, Maysam ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mu m 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 k Omega load, resulting in a measured power conversion efficiency of 85%.

引用

页码：69 / 72

页数：4

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