New manufacturing method for capacitive ultrasonic transducers with monocrystalline membrane
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作者:
Rey, Patrice
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机构:
CEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, FranceCEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
Rey, Patrice
[1
]
Salhi, M.
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CEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, FranceCEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
Salhi, M.
[1
]
Giroud, S.
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CEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, FranceCEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
Giroud, S.
[1
]
Robert, P.
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CEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, FranceCEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
Robert, P.
[1
]
Lagahe-Blanchard, C.
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机构:
TRACIT Technol, F-38054 Grenoble 09, FranceCEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
Lagahe-Blanchard, C.
[2
]
Clatot, S.
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机构:
FEMTO ST, CNRS, Dept LPMO, UMR 6174, F-25044 Besancon, FranceCEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
Clatot, S.
[3
]
Ballandras, S.
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机构:
FEMTO ST, CNRS, Dept LPMO, UMR 6174, F-25044 Besancon, FranceCEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
Ballandras, S.
[3
]
机构:
[1] CEA LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France
[2] TRACIT Technol, F-38054 Grenoble 09, France
[3] FEMTO ST, CNRS, Dept LPMO, UMR 6174, F-25044 Besancon, France
来源:
PROCEEDINGS OF THE IEEE TWENTIETH ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, VOLS 1 AND 2
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2007年
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D O I:
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中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A new method to manufacture Capacitive Micromachined Ultrasonic Transducers (cMUT) combining a wafer bonding and a sacrificial layer processes is introduced. Devices with monocrystalline silicon membranes over a polysilicon electrode have been manufactured. The process is highly reliable and shows an excellent homogeneity all over the 200mm wafer. From impedance measurements in air of a monocell test device biased under 140V, a resonance at 8.0MHz and an electromechanical coupling coefficient of 45% have been found. Underwater pulse-echo experiments are presented demonstrating a large bandwith of the device of about 130%.