Atomic layer deposition of zirconium oxide thin films

被引：28
作者：
Wang, Xin [1 ,2 ]
Ghosh, Sujan [1 ,2 ]
Afshar-Mohajer, Mahyar [1 ,2 ]
Zhou, Hua [3 ]
Liu, Yongqiang [1 ,4 ]
Han, Xiaoxiao [1 ,2 ]
Cai, Jiyu [1 ]
Zou, Min [1 ,2 ]
Meng, Xiangbo [1 ,2 ]
机构：
[1] Univ Arkansas, Dept Mech Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Ctr Adv Surface Engn, Fayetteville, AR 72701 USA
[3] Argonne Natl Lab, Adv Photon Source, Lemont, IL 60439 USA
[4] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Ctr Green Innovat, Sch Math & Phys,Beijing Key Lab Magneto Photoelec, Beijing 100083, Peoples R China
来源：
JOURNAL OF MATERIALS RESEARCH | 2020年 / 35卷 / 07期
基金：
美国国家科学基金会;
关键词：
atomic layer deposition; thin film; surface chemistry; CHEMICAL-VAPOR-DEPOSITION; ZRO2; FILMS; GROWTH; HAFNIUM; DIOXIDE; ENERGY; WATER;
D O I：
10.1557/jmr.2019.338
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tetrakis(dimethylamido)zirconium(IV) and water. We investigated the growth characteristics and mechanism of the ALD ZrO2 in the temperature range of 50-275 degrees C. Furthermore, the evolutions of film thickness and morphology were studied and discussed. It was found that the growth rate of ZrO2 decreased almost linearly with the increasing temperature from similar to 1.81 angstrom/cycle at 50 degrees C to similar to 0.8 angstrom/cycle at 225 degrees C. Interestingly, it was revealed that the growth of ZrO2 films ceased after a certain number of ALD cycles at a temperature higher than 250 degrees C. We also verified that the crystallinity of ZrO2 evolved with deposition temperature from amorphous to crystalline phase. In addition, the wettability of ZrO2 films was studied, showing a hydrophobic nature.
引用
收藏
页码：804 / 812
页数：9
相关论文
共 40 条
[1]   ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3/C7H8 precursor and ozone [J].
An, Jong-Ki ;
Kim, Jin-Tae ;
Kang, Goru ;
Oh, Nam Khen ;
Hahm, Sung-Ho ;
Lee, Geunsu ;
Park, In-Sung ;
Yun, Ju-Young .
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 701 :310-315
[2]  
[Anonymous], 2012, CLIN EXP RHEUMAT S70, V30, pS77
[3]   SELECTIVE ISOPENTANE FORMATION FROM CH3OH ON A NEW ONE-ATOMIC LAYER ZrO2/ZSM-5 HYBRID CATALYST [J].
Asakura, Kiyotaka ;
Aoki, Mutsuto ;
Iwasawa, Yasuhiro .
CATALYSIS LETTERS, 1988, 1 (11) :395-403
[4]   THIN-FILMS OF METAL-OXIDES ON SILICON BY CHEMICAL VAPOR-DEPOSITION WITH ORGANOMETALLIC COMPOUNDS .1. [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :298-&
[5]   CHARACTERISTICS OF GROWTH OF FILMS OF ZIRCONIUM AND HAFNIUM OXIDES (ZRO2, HFO2) BY THERMAL-DECOMPOSITION OF ZIRCONIUM AND HAFNIUM BETA-DIKETONATE COMPLEXES IN THE PRESENCE AND ABSENCE OF OXYGEN [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1203-1207
[6]   CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF ZRO2 FILMS FROM ORGANOMETALLIC COMPOUNDS [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
THIN SOLID FILMS, 1977, 47 (02) :109-120
[7]   Atomic layer deposition of insulating hafnium and zirconium nitrides [J].
Becker, JS ;
Kim, E ;
Gordon, RG .
CHEMISTRY OF MATERIALS, 2004, 16 (18) :3497-3501
[8]   A revisit to atomic layer deposition of zinc oxide using diethylzinc and water as precursors [J].
Cai, Jiyu ;
Ma, Zhiyuan ;
Wejinya, Uche ;
Zou, Min ;
Liu, Yuzi ;
Zhou, Hua ;
Meng, Xiangbo .
JOURNAL OF MATERIALS SCIENCE, 2019, 54 (07) :5236-5248
[9]   Synthesis of ZrO2 thin films by atomic layer deposition:: growth kinetics, structural and electrical properties [J].
Cassir, M ;
Goubin, F ;
Bernay, C ;
Vernoux, P ;
Lincot, D .
APPLIED SURFACE SCIENCE, 2002, 193 (1-4) :120-128
[10]   Pure Tetragonal ZrO2 Nanoparticles Synthesized by Pulsed Plasma in Liquid [J].
Chen, Liliang ;
Mashimo, Tsutomo ;
Omurzak, Emil ;
Okudera, Hiroki ;
Iwamoto, Chihiro ;
Yoshiasa, Akira .
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (19) :9370-9375
1234