Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric

被引：7

作者：

Pretet, J ^{[1
]}

Vandooren, A ^{[1
]}

Cristoloveanu, S ^{[1
]}

机构：

[1] UJF, CNRS, INPG, UMR,IMEP,ENSERG, F-38016 Grenoble 1, France

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

10.1109/ESSDERC.2003.1256941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gate, thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.

引用

页码：573 / 576

页数：4