Infrared absorption in Si-Si1-xGex-Si quantum wells

被引：3
|
作者：
Oszwaldowski, R
Fishman, G
机构：
[1] Inst Fizyki UMK, PL-87100 Torun, Poland
[2] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France
来源：
PHYSICA E | 1999年 / 4卷 / 01期
关键词：
electron states; infrared absorption; quantum wells; Si-Si1-xGex-Si;
D O I：
10.1016/S1386-9477(98)00238-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The eight-band k p method and the envelope function approximation is used to describe the infrared inter-subband absorption in Si-Si1-xGex-Si quantum wells. The valence and conduction bands are explicitly taken into account leading to an accurate description of the mixing of the conduction and valence band functions. Both as-grown and interdiffused (anneaIed) quantum wells are discussed, (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：11 / 16
页数：6
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