Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

被引：12

作者：

Bradford, C ^{[1
]}

O'Donnell, CB ^{[1
]}

Urbaszek, B ^{[1
]}

Balocchi, A ^{[1
]}

Morhain, C ^{[1
]}

Prior, KA ^{[1
]}

Cavenett, BC ^{[1
]}

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

X-ray diffraction; molecular beam epitaxy; superlattices; sulfides; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(01)00787-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown MgS bp MBE in the zinc blende crystal structure on GaAs(1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619 +/- 0.0001 run anti Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 hit fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：634 / 638

页数：5

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