Solid-State Synthesis and Thermoelectric Properties of Mg2Si0.5Ge0.5Sb m

被引：6

作者：

You, Sin-Wook ^{[1
]}

Shin, Dong-Kil ^{[1
]}

Ur, Soon-Chul ^{[1
]}

Kim, Il-Ho ^{[1
]}

机构：

[1] Korea Natl Univ Transportat, Dept Mat Sci & Engn, Chungju 380702, Chungbuk, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 06期

关键词：

Thermoelectric; magnesium silicide; solid solution; solid-state reaction; SI-GE SYSTEM; DOPED MG2SI;

D O I：

10.1007/s11664-014-3435-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mg2Si0.5Ge0.5Sb (m) (m = 0, 0.005, 0.01, 0.02, and 0.03) solid solutions were synthesized by a solid-state reaction and consolidated by hot pressing. All specimens showed n-type conduction, and carrier concentrations were increased from 4.0 x 10(17) cm(-3) to 3.2 x 10(21) cm(-3) by Sb doping. The electrical conductivity remarkably increased with increasing Sb doping content, but the absolute value of the Seebeck coefficient was reduced as the Sb doping content increased, which was attributed to the increased carrier concentration. The lowest thermal conductivity was 2.3 W/mK for Mg2Si0.5Ge0.5Sb0.02 at 723 K, and the maximum ZT value of 0.56 was obtained for Mg2Si0.5Ge0.5Sb0.02 at 823 K.

引用

页码：1504 / 1508

页数：5

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