Process technique for improving the tuning range in MOS varactors

被引：1

作者：

Kulkarni, JP ^{[1
]}

Bhat, N ^{[1
]}

机构：

[1] Cypress Semicond Technol Ltd, Bangalore, Karnataka, India

来源：

PROCEEDINGS OF THE IEEE INDICON 2004 | 2004年

关键词：

RF CMOS; poly-silicon depletion effect; varactors; Q factor;

D O I：

10.1109/INDICO.2004.1497813

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a new technique to improve the tuning range of MOS varactors in conventional CMOS technology. Poly-silicon depletion effect is intentionally incorporated in the gate electrode of varactor. It is demonstrated that the tuning range Increases by 60% without degradation in Q factor. The process for the proposed poly-silicon depletion effect does not require any extra process steps, except the redefinition of the appropriate masks, making this technique compatible with current CMOS technology. An analytical model for this improvement is also discussed.

引用

页码：534 / 537

页数：4

共 50 条

[21] Stress-induced failure modes in high-tuning range RF MEMS varactors
Chokshi, Trushal
Peroulis, Dimitrios
GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS, 2005, : 517 - 520
[22] Characterization, modeling, and optimization of FinFET MOS varactors
Dehan, M.
Parvais, B.
Subramanian, V.
Gustin, C.
Loo, J.
Mercha, A.
Decoutere, S.
2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2007, : 28 - +
[23] Breakdown effects on MOS varactors and VCO's
Sadat, A
Yang, H
Xiao, EJ
Yuan, JS
PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM & PDA EXHIBITION JOINTLY WITH 17TH EUROPEAN FREQUENCY AND TIME FORUM, 2003, : 556 - 559
[24] Parametric Conversion Using Custom MOS Varactors
Howard Chan
Zhongbo Chen
Sebastian Magierowski
Krzysztof (Kris) Iniewski
EURASIP Journal on Wireless Communications and Networking, 2006
[25] Compact Parametric Downconversion Using MOS Varactors
Magierowski, Sebastian
Zourntos, Takis
Bousquet, Jean-Francois
Zhao, Zhixing
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 1377 - +
[26] On the use of MOS varactors in RF VCO's
Andreani, P
Mattisson, S
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (06) : 905 - 910
[27] Parametric conversion using custom MOS varactors
Chan, Howard
Chen, Zhongbo
Magierowski, Sebastian
Iniewski, Krzysztof
EURASIP JOURNAL ON WIRELESS COMMUNICATIONS AND NETWORKING, 2006, 2006 (1)
[28] 25 GHz and 28 GHz wide tuning range 130 nm CMOS VCOs with ferroelectric varactors
Aspemyr, Lars
Kuylenstierna, Dan
Sjoland, Henrik
Vorobiev, Andrei
Gevorgian, Spartak
2007 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: ENABLING TECHNOLOGIES FOR EMERGING WIRELESS SYSTEMS, 2007, : 30 - +
[29] LEDS REPLACE VARACTORS FOR TUNING GAAS FETS
MONCRIEF, FJ
MICROWAVES, 1979, 18 (01): : 12 - 13
[30] A novel technique for improving the linearity of MOS sampling switch
Peng, Yunfeng
Yan, Wei
Kong, Derui
Zhou, Feng
2006 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLS 1-4: VOL 1: SIGNAL PROCESSING, 2006, : 2268 - 2272

← 1 2 3 4 5 →