Laser diodes with several emitting regions (λ=800-1100 nm) on the basis of epitaxially integrated heterostructures

被引：9

作者：

Marmalyuk, A. A. ^{[1
]}

Davydova, E. I. ^{[1
]}

Zverkov, M. V. ^{[1
]}

Konyaev, V. P. ^{[1
]}

Krichevsky, V. V. ^{[1
]}

Ladugin, M. A. ^{[1
]}

Lebedeva, E. I. ^{[1
]}

Petrov, S. V. ^{[1
]}

Sapozhnikov, S. M. ^{[1
]}

Simakov, V. A. ^{[1
]}

Uspenskiy, M. B. ^{[1
]}

Yarotskaya, I. V. ^{[1
]}

Pikhtin, N. A. ^{[2
]}

Tarasov, I. S. ^{[2
]}

机构：

[1] Stelmakh Res & Dev Inst Polyus, Moscow 117342, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 04期

关键词：

MU-M; SEMICONDUCTOR-LASERS; MOCVD;

D O I：

10.1134/S1063782611040154

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of a series of studies concerned with formation of epitaxially integrated InGaAs/AlGaAs and AlGaAs/AlGaAs heterostructures with several emitting regions and with investigation of properties of laser diodes based on the above structures operating in the spectral ranges lambda = 800-810, 890-910, and 1040-1060 nm are summarized. It is shown that the suggested approach to integration of individual laser structures by the method of the MOVPE epitaxy operates efficiently in fabrication of laser diodes for a wide spectral range on the basis of various types of heterostructures. This approach made it possible to efficiently increase the output power of the laser diodes practically without variation in their mass-and-dimension characteristics. The main advantages of this approach and its limitations are outlined. Epitaxial integration of two laser heterostructures made it possible to increase the differential quantum efficiency by 1.7-2.0 times, while integration of three laser heterostructures increases the differential quantum efficiency by a factor of 2.5-3.0.

引用

页码：519 / 525

页数：7

共 16 条

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