Laser diodes with several emitting regions (λ=800-1100 nm) on the basis of epitaxially integrated heterostructures

被引：9

作者：

Marmalyuk, A. A. ^{[1
]}

Davydova, E. I. ^{[1
]}

Zverkov, M. V. ^{[1
]}

Konyaev, V. P. ^{[1
]}

Krichevsky, V. V. ^{[1
]}

Ladugin, M. A. ^{[1
]}

Lebedeva, E. I. ^{[1
]}

Petrov, S. V. ^{[1
]}

Sapozhnikov, S. M. ^{[1
]}

Simakov, V. A. ^{[1
]}

Uspenskiy, M. B. ^{[1
]}

Yarotskaya, I. V. ^{[1
]}

Pikhtin, N. A. ^{[2
]}

Tarasov, I. S. ^{[2
]}

机构：

[1] Stelmakh Res & Dev Inst Polyus, Moscow 117342, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 04期

关键词：

MU-M; SEMICONDUCTOR-LASERS; MOCVD;

D O I：

10.1134/S1063782611040154

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of a series of studies concerned with formation of epitaxially integrated InGaAs/AlGaAs and AlGaAs/AlGaAs heterostructures with several emitting regions and with investigation of properties of laser diodes based on the above structures operating in the spectral ranges lambda = 800-810, 890-910, and 1040-1060 nm are summarized. It is shown that the suggested approach to integration of individual laser structures by the method of the MOVPE epitaxy operates efficiently in fabrication of laser diodes for a wide spectral range on the basis of various types of heterostructures. This approach made it possible to efficiently increase the output power of the laser diodes practically without variation in their mass-and-dimension characteristics. The main advantages of this approach and its limitations are outlined. Epitaxial integration of two laser heterostructures made it possible to increase the differential quantum efficiency by 1.7-2.0 times, while integration of three laser heterostructures increases the differential quantum efficiency by a factor of 2.5-3.0.

引用

页码：519 / 525

页数：7

共 16 条

[1] High-power laser diodes (λ=808-850 nm) based on asymmetric separate-confinement heterostructures
Andreev, A. Yu.
Leshko, A. Yu.
Lyutetskii, A. V.
Marmalyuk, A. A.
Nalyot, T. A.
Padalitsa, A. A.
Pikhtin, N. A.
Sabitov, D. R.
Simakov, V. A.
Slipchenko, S. O.
Khomylev, M. A.
Tarasov, I. S.
[J]. SEMICONDUCTORS, 2006, 40 (05) : 611 - 614
[2] High power diode lasers technology and application in Europe
Behringer, A
Eberhard, F
Herrmann, G
Luft, J
Maric, J
Morgott, S
Philippens, M
Teich, W
[J]. FIRST INTERNATIONAL SYMPOSIUM ON HIGH-POWER LASER MACROPROCESSING, 2003, 4831 : 4 - 13
[3] Bulaev PV, 2002, QUANTUM ELECTRON+, V32, P213, DOI 10.1070/QE2002v032n03ABEH002163
[4] High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
Davydova, E. I.
Zverkov, M. V.
Konyaev, V. P.
Krichevskii, V. V.
Ladugin, M. A.
Marmalyuk, A. A.
Padalitsa, A. A.
Simakov, V. A.
Sukharev, A. V.
Uspenskii, M. V.
[J]. QUANTUM ELECTRONICS, 2009, 39 (08) : 723 - 726
[5] Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser
Garcia, JC
Rosencher, E
Collot, P
Laurent, N
Guyaux, JL
Vinter, B
Nagle, J
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3752 - 3754
[6] High-power AlGaInAs/GaAs microstack laser bars
Hanke, C
Korte, L
Acklin, B
Behringer, M
Herrmann, G
Luft, J
De Odorico, B
Marchiano, M
Wilhelmi, J
[J]. IN-PLANE SEMICONDUCTOR LASERS IV, 2000, 3947 : 50 - 57
[7] Continuous-wave room temperature operation of bipolar cascade laser
Patterson, SG
Petrich, GS
Ram, RJ
Kolodziejski, LA
[J]. ELECTRONICS LETTERS, 1999, 35 (05) : 395 - 397
[8] Novel large-coupled optical cavity semiconductor lasers and multi-active region light-emitting diodes with high performance
Shen, GD
Lian, P
Guo, X
Yin, T
Chen, CG
Wang, GH
Du, JY
Cui, BF
Li, JJ
Liu, Y
Gao, G
Zou, DS
Chen, JX
[J]. OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 2000, 4225 : 327 - 330
[9] Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures
Slipchenko, SO
Vinokurov, DA
Pikhtin, NA
Sokolova, ZN
Stankevich, AL
Tarasov, IS
Alferov, ZI
[J]. SEMICONDUCTORS, 2004, 38 (12) : 1430 - 1439
[10] Laser diodes (λ=0.98 μm) with a narrow radiation pattern and low internal optical losses
Slipchenko, SO
Pikhtin, NA
Fetisova, NV
Khomylev, MA
Marmalyuk, AA
Nikitin, DB
Padalitsa, AA
Bulaev, PV
Zalevskii, ID
Tarasov, IS
[J]. TECHNICAL PHYSICS LETTERS, 2003, 29 (12) : 980 - 983

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