Extremely Wideband 0.18-μm CMOS Compact Distributed Low-Noise Amplifier

被引：0

作者：

Chirala, M. ^{[1
]}

Guan, X. ^{[2
]}

Huynh, C. ^{[3
]}

Nguyen, C. ^{[3
]}

机构：

[1] Z Commun Inc, San Diego, CA 92121 USA

[2] Skyworks Solut Inc, Irvine, CA USA

[3] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

来源：

2010 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM | 2010年

基金：

美国国家科学基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-mu m CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 +/- 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 X 0.37 mm(2) chip size including RF pads.

引用

页数：4

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