Fabrication and Photovoltaic Properties of Organic Solar Cell Based on Zinc Phthalocyanine

被引:42
作者
Ul Islam, Zahoor [1 ]
Tahir, Muhammad [2 ,3 ]
Syed, Waqar Adil [1 ]
Aziz, Fakhra [4 ]
Wahab, Fazal [5 ]
Said, Suhana Mohd [3 ]
Sarker, Mahidur R. [6 ]
Ali, Sawal Hamid Md [7 ]
Sabri, Mohd Faizul Mohd [6 ]
机构
[1] Int Islamic Univ Islamabad, Dept Phys, Islamabad 44000, Pakistan
[2] Abdul Wali Khan Univ, Dept Phys, Mardan 23200, Pakistan
[3] Univ Malaya, Fac Engn, Dept Elect Engn, Kuala Lumpur 50603, Malaysia
[4] Univ Peshawar, Jinnah Coll Women, Dept Elect, Peshawar 25120, Pakistan
[5] Karakoram Int Univ, Dept Phys, Gilgit Baltistan 15100, Pakistan
[6] Univ Malaya, Fac Engn, Dept Mech Engn, Kuala Lumpur 50603, Malaysia
[7] Univ Kebangsaan Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Malaysia
关键词
zinc phthalocyanine (ZnPc); photovoltaic properties; organic solar cell; thin film characterization; optical bandgap; current-voltage (I-V) properties; THIN-FILMS; ELECTRICAL CHARACTERIZATION; SCHOTTKY DIODE; OPTICAL-PROPERTIES; VOPCPHO; ENHANCEMENT; PERFORMANCE; TRANSPORT; ZNPC;
D O I
10.3390/en13040962
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Herein, we report thin films' characterizations and photovoltaic properties of an organic semiconductor zinc phthalocyanine (ZnPc). To study the former, a 100 nm thick film of ZnPc is thermally deposited on quartz glass by using vacuum thermal evaporator at 1.5 x 10(-6) mbar. Surface features of the ZnPc film are studied by using scanning electron microscope (SEM) with in situ energy dispersive x-ray spectroscopy (EDS) analysis and atomic force microscope (AFM) which reveal uniform film growth, grain sizes and shapes with slight random distribution of the grains. Ultraviolet-visible (UV-vis) and Fourier Transform Infrared (FTIR) spectroscopies are carried out of the ZnPc thin films to measure its optical bandgap (1.55 eV and 3.08 eV) as well as to study chemical composition and bond-dynamics. To explore photovoltaic properties of ZnPc, an Ag/ZnPc/PEDOT:PSS/ITO cell is fabricated by spin coating a 20 nm thick film of hole transport layer (HTL)-poly-(3,4-ethylenedioxythiophene) poly(styrene sulfonic acid) (PEDOT:PSS)-on indium tin oxide (ITO) substrate followed by thermal evaporation of a 100 nm layer of ZnPc and 50 nm silver (Ag) electrode. Current-voltage (I-V) properties of the fabricated device are measured in dark as well as under illumination at standard testing conditions (STC), i.e., 300 K, 100 mW/cm(2) and 1.5 AM global by using solar simulator. The key device parameters such as ideality factor (n), barrier height (<mml:semantics>phi b</mml:semantics>), junction/interfacial resistance (R-s) and forward current rectification of the device are measured in the dark which exhibit the formation of depletion region. The Ag/ZnPc/PEDOT:PSS/ITO device demonstrates good photovoltaic characteristics by offering 0.48 fill factor (FF) and 1.28 +/- 0.05% power conversion efficiency (PCE), eta.
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页数:14
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