Electrical properties of Mn-Co-Ni oxides prepared at low temperatures

被引:4
作者
Yokoyama, T. [1 ]
Meguro, T. [2 ]
Okazaki, S. [1 ]
Fujikawa, H. [1 ]
Ishikawa, T. [2 ]
Tatami, J. [2 ]
Wakihara, T. [2 ]
Komeya, K. [2 ]
Sasamoto, T. [3 ]
机构
[1] Yokohama Natl Univ, Grad Sch Engn, Hodogaya Ku, 79-5 Tokiwadai, Yokohama, Kanagawa 2408501, Japan
[2] Yokohama Natl Univ, Grad Sch Environm & Informat Sci, Hodogaya nku, 79-5 Tokiwadai, Yokohama, Kanagawa 2408501, Japan
[3] Kanagawa Inst Technol, Atsugi, Kanagawa 2430292, Japan
来源
ADVANCED MATERIALS AND PROCESSING IV | 2007年 / 29-30卷
关键词
Mn-Co-Ni oxide; cubic spinel; thermistor; electrical resistance; thermistor constant;
D O I
10.4028/www.scientific.net/AMR.29-30.359
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Changes in crystal phase and electrical properties of oxides composed of Mn, Co, and Ni with the molar ratios of 5:2:1 and 3:3:1 were investigated. Starting oxides were fired from 250 degrees C to 800 degrees C, then maintained at prescribed temperatures for 3 h in air. In the 5:2:1 specimen, a monophase consisting of a cubic spinel oxide that is important to electrical conductivity was obtained at firing temperature of 800 degrees C. In the 3:3:1 specimen, the monophase was obtained at temperatures ranging from 600 degrees C to 800 degrees C. Electrical resistance decreased exponentially with increasing temperature for all specimens fired at temperatures ranging from 250 degrees C to 800 degrees C, indicating that the oxides have intrinsic thermistor characteristics with negative temperature coefficient (NTC). The temperature dependence of the thermistor constant (B value) necessary for practical application was considered to be related to the existence ratio of cubic spinel-type and ilmenite-type structures and the lattice constant of the cubic spinel-type structure. The electrical conduction was stabilized by annealing at prescribed temperatures for more than 720 minutes.
引用
收藏
页码:359 / +
页数:2
相关论文
共 3 条
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Yokoyama, T ;
Abe, Y ;
Meguro, T ;
Komeya, K ;
Kondo, K ;
Kaneko, S ;
Sasamoto, T .
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