Theory of Recombination in Non-Crystalline Junctions

被引：0

作者：

Nardone, Marco ^{[1
]}

Karpov, Victor G. ^{[1
]}

Shvydka, Diana ^{[2
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

[2] Univ Toledo, Dept Radiat Oncol, Toledo, OH 43606 USA

来源：

THIN-FILM COMPOUND SEMICONDUCTOR VOLTAICS-2009 | 2010年 / 1165卷

关键词：

ADMITTANCE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A theory of non-crystalline recombination junctions is developed and compared to experimental data. Junction transport is represented as hopping in both real and energy spaces, dominated by rare yet exponentially effective optimum channels having favorable configurations of localized states. Our work correlates the current-voltage characteristics of non-crystalline devices with material parameters and predicts large non-ideality factors increasing under light.

引用

页码：81 / +

页数：2

共 15 条

[1]

Abakumov V. N., 1991, Nonradiative Recombination in Semiconductors

[2]

[Anonymous], ZH EKSP TEOR FIZ

[3]

COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9

[4]

Fahrenbruch A.L., 1983, Fundamentals of Solar Cells (Photovoltaic Solar Energy Conversion)

[5] Electron-beam induced degradation in CdTe photovoltaics [J].

Harju, R ;

Karpov, VG ;

Grecu, D ;

Dorer, G .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1794-1801

[6] Admittance spectroscopy revisited: Single defect admittance and displacement current [J].

Karpov, VG ;

Shvydka, D ;

Jayamaha, U ;

Compaan, AD .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :5809-5813

[7]

Mott N.F., 1971, Electronic Processes in Non-Crystalline Materials

[8] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

[9]

Raikh M. E., 1991, Mesoscopic Phenomena in Solids, P315

[10] Electronic loss mechanisms in chalcopyrite based heterojunction solar cells [J].

Rau, U ;

Jasenek, A ;

Schock, HW ;

Engelhardt, F ;

Meyer, T .

THIN SOLID FILMS, 2000, 361 :298-302

← 1 2 →