Metal-Assisted Chemical Etching of Silicon: A Review

被引:1635
作者
Huang, Zhipeng [1 ,2 ]
Geyer, Nadine [1 ]
Werner, Peter [1 ]
de Boor, Johannes [1 ]
Goesele, Ulrich [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Jiangsu Univ, Sci Res Acad, Funct Mol Mat Ctr, Zhenjiang 212013, Peoples R China
关键词
SI NANOWIRE ARRAYS; POROUS SILICON; HYDROGEN-PEROXIDE; ELECTROCATALYTIC REDUCTION; FORMATION MECHANISM; OPTICAL-PROPERTIES; SOLAR-CELLS; FABRICATION; MORPHOLOGY; DEPOSITION;
D O I
10.1002/adma.201001784
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.
引用
收藏
页码:285 / 308
页数:24
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