Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates

被引：6

作者：

Kubiszyn, L. ^{[1
,2
]}

Benyahia, D. ^{[1
]}

Michalczewski, K. ^{[2
]}

Hackiewicz, K. ^{[1
]}

Keblowski, A. ^{[2
]}

Martyniuk, P. ^{[1
]}

Rutkowski, J. ^{[1
]}

Piotrowski, J. ^{[2
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego Str, PL-00908 Warsaw, Poland

[2] Vigo Syst SA, 129-133 Poznanska Str, PL-05850 Ozarow Mazowiecki, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2020年 / 534卷

关键词：

Molecular beam epitaxy; Antimonides; Gallium arsenide substrate; Infrared devices;

D O I：

10.1016/j.jcrysgro.2020.125512

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Interband cascade infrared detectors (IB CIDs) are devices built from multiple cells connected in series using specially designed interband tunneling and relaxation regions. Such design enables effective collection of photogenerated carriers and is particularly beneficial in the case of short diffusion length in absorber's material. In this work, we report on the growth and characterization of type-II InAs/GaSb superlattices IB CIDs on highly lattice-mismatched (0 0 1) GaAs substrates for mid-wave range. IB CIDs are characterized by high resolution X-ray diffraction, dark current and current responsivity. The performance of devices with different number of stages is discussed. Devices with 50% cut-off wavelength at 5.3 mu m exhibit at temperature 300 K peak detectivity of 3.6 x 10(8) cmHz(1/2) W-1 .

引用

页数：4

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