Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

被引：43

作者：

Sassine, Gilbert ^{[1
]}

Nail, Cecile ^{[1
]}

Blaise, Philippe ^{[1
]}

Sklenard, Benoit ^{[1
]}

Bernard, Mathieu ^{[1
]}

Gassilloud, Remy ^{[1
]}

Marty, Aurelie ^{[1
]}

Veillerot, Marc ^{[1
]}

Vallee, Christophe ^{[2
]}

Nowak, Etienne ^{[1
]}

Molas, Gabriel ^{[1
]}

机构：

[1] CEA, LETI, Minatec Campus,17 Ave Martyrs, F-38045 Grenoble, France

[2] 17 Ave Martyrs, F-38045 Grenoble, France

来源：

ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 02期

基金：

欧盟地平线“2020”;

关键词：

atomistic simulations; hybrid resistive random access memories (HRRAMs); nanodevices; reliability;

D O I：

10.1002/aelm.201800658

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Here, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide-based conductive bridge random access memories (hybrid resistive random access memories (HRRAMs)) performances is investigated. To this aim, several RRAM technologies are studied using various resistive layers and top electrodes. Material analyses allow to highlight the hybrid aspect of HRRAM conductive filament. Density functional theory simulations are used to extract microscopic features and highlight differences from a material point of view. Integrated RRAM technology performances such as window margin, endurance, and retention are then measured to analyze copper and oxygen vacancy influence on device characteristics. A new RRAM classification correlating filament composition and memory performances is proposed.

引用

页数：7

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