Effect of substrate temperature on the plasma texturing process of c-Si wafers for black silicon solar cells

被引：2

作者：

Murias, D. ^{[1
]}

Moreno, M. ^{[1
]}

Reyes-Betanzo, C. ^{[1
]}

Torres, A. ^{[1
]}

Rosales, P. ^{[1
]}

Martinez, J. ^{[1
]}

Ambrosio, R. ^{[2
]}

Roca i Cabarrocas, P. ^{[3
]}

Carlos, N. ^{[1
]}

Itzmoyotl, A. ^{[1
]}

机构：

[1] INAOE, Natl Inst Astrophys Opt & Elect, Puebla 72840, Mexico

[2] Meritorious Autonomous Univ Puebla, BUAP, Sch Elect, Puebla 72570, Mexico

[3] Ecole Polytech, CNRS, Lab Phys Interfaces & Thin Films, Palaiseau, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 07期

关键词：

black silicon; plasma texturing; solar cells; substrates; FABRICATION;

D O I：

10.1002/pssa.201532954

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a study of the effect of the substrate temperature on the formation of black silicon on c-Siwafers and consequently on the reduction of the wafer surface diffuse reflectance. We observed that lower substrate temperatures enhance the texturing processes producing completely black silicon surfaces. The optimized substrate temperature (2.5 degrees C) used during the plasma process has resulted in the formation of well-defined pyramid-like structures as is done by wet processes. Moreover, the textured c-Si wafers have very low diffuse reflectance values, as low as 3%, which are much lower than those values obtained using wet texturing processes based on KOH and NaOH solutions (which are in the range of 12-14%). (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1937 / 1941

页数：5

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