Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

被引：52

作者：

Lanni, Luigia ^{[1
]}

Ghandi, Reza ^{[1
]}

Malm, Bengt Gunnar ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Stockholm, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 04期

关键词：

Bipolar junction transistor (BJT); emitter coupled logic (ECL); high-temperature integrated circuits (ICs); OR-NOR gate; silicon carbide (SiC);

D O I：

10.1109/TED.2011.2182514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Operation up to 300 degrees C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input OR-NOR gate operated on - 15 V supply voltage from 27 degrees C up to 300 degrees C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.

引用

页码：1076 / 1083

页数：8

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