Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

被引：52

作者：

Lanni, Luigia ^{[1
]}

Ghandi, Reza ^{[1
]}

Malm, Bengt Gunnar ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Stockholm, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 04期

关键词：

Bipolar junction transistor (BJT); emitter coupled logic (ECL); high-temperature integrated circuits (ICs); OR-NOR gate; silicon carbide (SiC);

D O I：

10.1109/TED.2011.2182514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Operation up to 300 degrees C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input OR-NOR gate operated on - 15 V supply voltage from 27 degrees C up to 300 degrees C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.

引用

页码：1076 / 1083

页数：8

共 50 条

[1] 4H-SiC integrated circuits for high-temperature applications
Zhenyu, Tang
Xiaoyan, Tang
Yimeng, Zhang
Pu, Zhao
Yuyin, Sun
Yuming, Zhang
JOURNAL OF CRYSTAL GROWTH, 2023, 605
[2] Bipolar Integrated Circuits in 4H-SiC
Singh, Shakti
Cooper, James A.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) : 1084 - 1090
[3] High Temperature Simulation of 4H-SiC Bipolar Circuits
Elgabra, Hazem
Singh, Shakti
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2015, 3 (03): : 302 - 305
[4] Demonstration and characterization of bipolar monolithic integrated circuits in 4H-SiC
Lee, Jeong-Youb
Singh, Shakti
Cooper, James A.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1946 - 1953
[5] 500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
Elahipanah, Hossein
Kargarrazi, Saleh
Salemi, Arash
Ostling, Mikael
Zetterling, Carl-Mikael
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (10) : 1429 - 1432
[6] High temperature characterization of 4H-SiC bipolar junction transistors
Krishnaswami, Sumi
Agarwal, Anant
Richmond, James
Capell, Craig
Ryu, Sei-Hyung
Palmour, John
Geil, Bruce
Katsis, Dimosthenis
Scozzie, Charles
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1437 - 1440
[7] High Temperature Compensated Voltage Reference Integrated Circuits on 4H-SiC Material
Banu, Viorel
Godignon, Philippe
Alexandru, Mihaela
Montserrat, Josep
Jorda, Xavier
Millan, Jose
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY, 2014, 17 (04): : 417 - 432
[8] 4H-SiC MESFET Specially Designed and Fabricated for High Temperature Integrated Circuits
Alexandru, M.
Banu, V.
Godignon, P.
Vellvehi, M.
Millan, J.
2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2013, : 103 - 106
[9] High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits
Suvanam, Sethu Saveda
Kuroki, Shin-Ichiro
Lanni, Luigia
Hadayati, Raheleh
Ohshima, Takeshi
Makino, Takahiro
Hallen, Anders
Zetterling, Carl-Mikael
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (02) : 852 - 858
[10] High-temperature optoelectronic synaptic devices based on 4H-SiC
Mingxuan BU
Yue WANG
Zhenyi NI
Dongke LI
Deren YANG
Xiaodong PI
Science China(Information Sciences), 2025, 68 (04) : 151 - 159

← 1 2 3 4 5 →