Growth of non-polar GaN on LiGaO2 by plasma-assisted MBE

被引：3

作者：

Schuber, R. ^{[1
,2
]}

Chen, Y. L. ^{[3
]}

Shih, C. H. ^{[3
]}

Huang, T. H. ^{[4
]}

Vincze, P. ^{[5
]}

Lo, I. ^{[5
]}

Chang, L. W. ^{[4
]}

Schimmel, Th. ^{[2
,5
]}

Chou, M. M. C. ^{[3
]}

Schaadt, D. M. ^{[1
,2
]}

机构：

[1] Karlsruhe Inst Technol KIT, DFG Ctr Funct Nanostruct CFN, D-76131 Karlsruhe, Germany

[2] Karlsruhe Inst Technol KIT, Inst Appl Phys, D-76131 Karlsruhe, Germany

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 80424, Taiwan

[5] Karlsruhe Inst Technol KIT, Inst Nanotechnol, D-76131 Karlsruhe, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Non-polar nitrides; LiGaO2; GaN; Molecular beam epitaxy; PLANE GAN;

D O I：

10.1016/j.jcrysgro.2010.10.118

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We show that non-polar M-plane and A-plane GaN can be grown on LiGaO2 with very high phase purity. The morphology of the GaN surfaces is influenced by the underlying substrate morphology, which exhibits a high abundance of surface scratches. Nevertheless, the root-mean-square roughness of the samples is low, i.e. 2.9 nm for M-plane GaN and 10 nm for A-plane GaN. The predominant defects in the GaN films are threading dislocations and stacking faults. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：76 / 79

页数：4

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