A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism

被引：15

作者：

Bosio, Alessio ^{[1
]}

Borelli, Carmine ^{[1
]}

Parisini, Antonella ^{[1
]}

Pavesi, Maura ^{[1
]}

Vantaggio, Salvatore ^{[1
]}

Fornari, Roberto ^{[1
]}

机构：

[1] Univ Parma, Dept Math Phys & Comp Sci, I-43124 Parma, Italy

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2020年 / 9卷 / 05期

关键词：

Ohmic contacts; epsilon-Ga2O3; wide bandgap semiconductors; electrical characterization; Sputtering; Thin film growth; MOCVD; OHMIC CONTACTS;

D O I：

10.1149/2162-8777/ab8f37

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the conduction mechanisms across novel contacts to epitaxial films of pure phase epsilon-Ga2O3 (epsilon-Ga2O3) were investigated. Different structures made by sputtered metal and oxide thin films were tested as electrical contacts. I-V characteristics show heterogeneous behaviors, revealing different conduction mechanisms according to the applied bias. The results are interesting as they offer a viable method to obtain ohmic contacts on epsilon-Ga2O3, which is less studied than other gallium oxide polymorphs but may find application in new electronic and optoelectronic devices. The newly developed ohmic contacts allow to fabricate simple test devices and assess the potential of this material. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

引用

页数：6

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