A molecular dynamics simulation of cluster dissociation process under cluster ion implantation

Cluster ion implantation is a useful technique for manufacturing ultra-shallow-junction. In order to investigate the depth and lateral distribution as well as cluster dissociation, we performed a molecular dynamics simulation that injects 200-500 eV/atom boron cluster into single crystal silicon. The lateral spread will be an important problem at low implantation energies. With decreasing energy the lateral spread under cluster bombardment become significantly larger than for atom bombardment. The lateral distribution is also influenced by the orientation of the cluster with respect to the surface. Almost complete dissociation of the cluster was observed in all cases. (C) 2003 Published by Elsevier B.V.